R.F. sputtered amorphous silicon schottky Barrier solar cells
نویسندگان
چکیده
2014 The preparation of hydrogenated, r.f. sputtered a-Si films, suitable for large area solar cell arrays is discussed. Optical and electrical measurements on such materials contacted with a variety of metals are detailed. Initial experimental prototype cells, with areas up to 1 cm2 and efficiencies of around 2 %, are described. REVUE DE PHYSIQUE APPLIQUÉE TOME 13, DÉCEMBRE 1978,
منابع مشابه
Properties of Sputtered A-ge and A-ge:h Thin Films
Title of Thesis : Properties of sputtered a-Ge and a-Ge:H thin films Hanjin Cho, Master of Science in Electrical Engineering , 1987 Thesis directed by : Dr. Kenneth S. Sohn. The effect of the amorphous and glassy structure of amorphous germanium films on their electrical characteristics was investigated experimentally. The films were deposited onto silicon substrates using a modified MRC 8800 t...
متن کاملAmorphous Silicon Core-shell Nanowire Solar Cells
Nanostructures such as nanoparticles and nanowires have been demonstrated as powerful tools to improve light absorption[1-4], to enable low temperature process[5], to demonstrate multi-exciton generation[6], and to decouple the absorption depth and carrier diffusion length[7, 8]. Here we demonstrated the first amorphous silicon coreshell nanowire solar cells, which can be fabricated through a l...
متن کاملMicrostructure and electrical properties of co-sputtered Cu embedded amorphous SiC
The properties of co-sputtered Cu embedded amorphous SiC were studied. The effect of the microstructure features on the electrical conduction of the SiC films, with Cu volume% between 0% and 57%, was analysed by temperature dependent measurements, along with an effective-medium approximation model. The electrical conduction in Cu embedded amorphous SiC, was attributed to the tunnelling mechanis...
متن کاملThe Density of States in Heavily Doped Regions of Silicon Solar Cells
The density of states (DOS) of crystalline silicon changes with the introduction of dopants due to the formation of an impurity band and band tails. Until now, the DOS of undoped silicon has been used to model silicon devices, regardless of the doping level. This approximation may not be satisfactory for the emitter and back surface field regions of silicon solar cells. Therefore, we measured t...
متن کامل349 R.f. Planar Magnetron Sputtered Zno Films I: Structural Properties
The structural properties of r.f. planar magnetron sputtered ZnO films are studied as a function of deposition parameters: substrate type, substrate temperature, sputter gas pressure, growth rate and sputtering power. These films are applied as piezoelectric transducers in micromechanical sensors and actuators. The electric properties, and consequently the piezoelectric behaviour, depend strong...
متن کامل